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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION *With TO-220C package *Complement to type TIP32/32A/32B/32C APPLICATIONS *Medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER TIP31 VCBO Collector-base voltage TIP31A TIP31B TIP31C TIP31 VCEO Collector-emitter voltage TIP31A TIP31B TIP31C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 100 40 60 80 100 5 3 5 1 40 2 150 -65~150 V A A A w V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP31 TIP31A IC=30mA; IB=0 TIP31B TIP31C VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP31 TIP31A TIP31B TIP31C TIP31/31A TIP31B/31C IC=3A IB=0.375A IC=3A ; VCE=4V VCE=40V; VEB=0 VCE=60V; VEB=0 CONDITIONS SYMBOL TIP31/31A/31B/31C MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 100 1.2 1.8 V V ICES Collector cut-off current 0.2 VCE=80V; VEB=0 VCE=100V; VEB=0 VCE=30V; IB=0 0.3 VCE=60V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V 25 10 3 50 1.0 mA ICEO Collector cut-off current mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP31/31A/31B/31C Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C 4 |
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